Bluish-green semipolar GaInN/GaN light emitting diodes on {11̄01} GaN side facets
نویسنده
چکیده
Bluish-green semipolar GaInN/GaN light emitting diodes were realized on the {11̄01} side facets of selectively grown GaN stripes with an on-wafer optical output power of 240μW@20mA for about 500 nm emission wavelength. Structural investigations using TEM, SEM, HRXRD and AFM could be related to the luminescence properties in PL and CL. The defect-related luminescence peaks at 3.3 eV and 3.41 eV, typically observed in nonand semipolar GaN, could be eliminated in our facet LEDs by optimized growth conditions. Furthermore, a 50% higher indium incorporation for these {11̄01} facets compared to c-plane growth is found, what helps significantly to achieve longer wavelength emission in spite of the reduced Quantum Confined Stark Effect.
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